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Recycling a slurry for reuse in chemical mechanical planarization of tungsten wafer: Effect of chemical adjustments and comparison between static and dynamic experiments

Testa, Fabrice and Coetsier, Clémence and Carretier, Emilie and Ennahali, Mohamed and Laborie, Bernard and Moulin, Philippe Recycling a slurry for reuse in chemical mechanical planarization of tungsten wafer: Effect of chemical adjustments and comparison between static and dynamic experiments. (2014) Microelectronic Engineering, 113. 114-122. ISSN 0167-9317

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Official URL: https://doi.org/10.1016/j.mee.2013.07.022

Abstract

Recycling abrasive slurry that has been used in chemical mechanical polishing (CMP) is one of the options for reducing the cost of manufacturing microchip processors. We use ultrafiltration which is a method of choice to recycle silica (SiO2)-based slurry. Taking into account that the chemical composition of abrasive slurry plays an important role in tungsten CMP (W-CMP), chemical adjustments have to be made so that the concentrated after used slurry can be reused. In this study, we investigate the effects of chemical additives (iron catalyst, oxalic acid as complexing agent and surfactants as stabilizers) in slurry that has been retreated by ultrafiltration. Experiments are conducted both under static and dynamic conditions and results are compared to better understand the effect of chemical adjustments on the main performances of W-CMP. An optimal chemical adjustment is proposed through a design of experiments evaluation to obtain a concentrated after used and chemically adjust slurry comparable to the operational point of use slurry.

Item Type:Article
HAL Id:hal-01053254
Audience (journal):International peer-reviewed journal
Uncontrolled Keywords:
Institution:Other partners > Aix-Marseille Université - AMU (FRANCE)
French research institutions > Centre National de la Recherche Scientifique - CNRS (FRANCE)
Other partners > KEMESYS - Laboratoire (FRANCE)
Other partners > Ecole Centrale Marseille (FRANCE)
Laboratory name:
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Deposited By: Loetitia MOYA
Deposited On:09 Oct 2018 10:12

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