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Localization of Dark Current Random Telegraph Signal sources in pinned photodiode CMOS Image Sensors

Durnez, Clémentine and Goiffon, Vincent and Rizzolo, Serena and Magnan, Pierre and Virmontois, Cédric and Rubaldo, Laurent Localization of Dark Current Random Telegraph Signal sources in pinned photodiode CMOS Image Sensors. (2017) In: 2017 International Conference on Noise and Fluctuations (ICNF), 20 June 2017 - 23 June 2017 (Vilnius, Lithuania).

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Official URL: http://dx.doi.org/10.1109/ICNF.2017.7985959

Abstract

This work presents an analysis of Dark Current Random Telegraph Signal (DC-RTS) in CMOS Image Sensors (CIS). The objective is to provide new insight on RTS in modern CIS by determining the localization of DC-RTS centers and the oxide interfaces involved. It is shown that DC-RTS centers are located near the transfer gate. In particular, it is demonstrated that both gate oxide and Shallow Trench Isolation (STI) contribute to this parasitic dark current variation.

Item Type:Conference or Workshop Item (Paper)
Additional Information:Thanks to the IEEE (Institute of Electrical and Electronics Engineers). This paper is available at : http://ieeexplore.ieee.org/document/7985959/ “© 2017 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
HAL Id:hal-01662424
Audience (conference):International conference proceedings
Uncontrolled Keywords:
Institution:French research institutions > Centre National d'Études Spatiales - CNES (FRANCE)
Université de Toulouse > Institut Supérieur de l'Aéronautique et de l'Espace - ISAE-SUPAERO (FRANCE)
Other partners > SOFRADIR (FRANCE)
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Deposited By: Clémentine Durnez
Deposited On:13 Dec 2017 09:06

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