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TCAD simulation of the single event effects in normally-off GaN transistors after heavy ion radiation

Zerarka, Moustafa and Austin, Patrick and Bensoussan, Alain and Morancho, Frédéric and Durier, André TCAD simulation of the single event effects in normally-off GaN transistors after heavy ion radiation. (2017) IEEE Transactions on Nuclear Science, 64 (8). 2242-2249. ISSN 0018-9499

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Official URL: http://dx.doi.org/10.1109/TNS.2017.2710629

Abstract

Electrical behavior of normally-off GaN power transistors under heavy ion stress radiation is presented based on 2D-TCAD numerical simulation in order to better understand the mechanism of Single Event Effects (SEE) in these devices.

Item Type:Article
Additional Information:Thanks to IEEE editor. The original PDF of the article can be found at http://ieeexplore.ieee.org/stamp/stamp.jsp?arnumber=7937891
Audience (journal):International peer-reviewed journal
Audience (conference):International conference proceedings
Uncontrolled Keywords:
Institution:French research institutions > Centre National de la Recherche Scientifique - CNRS (FRANCE)
Université de Toulouse > Institut National Polytechnique de Toulouse - INPT (FRANCE)
Université de Toulouse > Université Toulouse III - Paul Sabatier - UPS (FRANCE)
Université de Toulouse > Université Toulouse - Jean Jaurès - UT2J (FRANCE)
Université de Toulouse > Université Toulouse 1 Capitole - UT1 (FRANCE)
Other partners > IRT Saint Exupéry - Institut de Recherche Technologique (FRANCE)
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Deposited By: Marie-Pierre Le Tallec
Deposited On:29 Nov 2017 15:44

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