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In-Depth Analysis on Radiation Induced Multi-Level Dark Current Random Telegraph Signal in Silicon Solid State Image Sensors

Durnez, Clementine and Goiffon, Vincent and Virmontois, Cédric and Belloir, Jean-Marc and Magnan, Pierre and Rubaldo, Laurent In-Depth Analysis on Radiation Induced Multi-Level Dark Current Random Telegraph Signal in Silicon Solid State Image Sensors. (2017) IEEE Transactions on Nuclear Science, vol. 64 (n° 1). pp. 19-26. ISSN 0018-9499

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Official URL: http://dx.doi.org/10.1109/TNS.2016.2633333

Abstract

Radiation-induced phenomena constitute a big concern for image sensors dedicated to space application. Particles(such as protons or electrons) can impact the crystalline structure of the detector and create switches in the dark response. This may be a problem, especially for calibration and so on image quality. This article aims at expressing the method used for switch detection and showing some properties of these Random Telegraph Signals (RTS), concerning, among other things, their amplitudes, discrete levels, and switching times. A first analysis of these results is also given.

Item Type:Article
Audience (journal):International peer-reviewed journal
Uncontrolled Keywords:
Institution:French research institutions > Centre National des Etudes Spatiales - CNES (FRANCE)
Université de Toulouse > Institut Supérieur de l'Aéronautique et de l'Espace - ISAE-SUPAERO (FRANCE)
Other partners > SOFRADIR (FRANCE)
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Deposited By: Clémentine Durnez
Deposited On:24 Apr 2017 14:02

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