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Dark Current Blooming in Pinned Photodiode CMOS Image Sensors

Belloir, Jean-Marc and Lincelles, Jean-Baptiste and Pelamatti, Alice and Durnez, Clementine and Goiffon, Vincent and Virmontois, Cédric and Paillet, Philippe and Magnan, Pierre and Gilard, Olivier Dark Current Blooming in Pinned Photodiode CMOS Image Sensors. (2017) IEEE Transactions on Electron Devices, vol. 64 (n° 3). pp. 11161-1166. ISSN 0018-9383

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Official URL: http://dx.doi.org/10.1109/TED.2017.2654515

Abstract

This paper demonstrates the existence of dark current blooming in pinned photodiode CMOS image sensors with the support of both experimental measurements and TCAD simulations. It is usually assumed that blooming can appear only under illumination, when the charge collected by a pixel exceeds the full well capacity (i.e. when the photodiode becomes forward biased). In this work, it is shown that blooming can also appear in the dark by dark current leakage from hot pixels in reverse bias (i.e. below the full well capacity). The dark current blooming is observed to propagate up to nine pixels away in the experimental images and can impact hundreds of pixels around each hot pixel. Hence, it can be a major image quality issue for state-of-the-art pinned photodiode CMOS Image Sensors used in dark current limited applications such as low-light optical imaging and should be taken into account in the dark current subtraction process. This work also demonstrates that one of the key parameter for dark current optimization, the transfer gate bias during integration, has to be carefully chosen depending on the application because the optimum bias for dark current reduction leads to the largest dark current blooming effects.

Item Type:Article
Additional Information:Thanks to the IEEE (Institute of Electrical and Electronics Engineers). This paper is available at : http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=16 “© 2017 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
HAL Id:hal-01503707
Audience (journal):International peer-reviewed journal
Uncontrolled Keywords:
Institution:French research institutions > Commissariat à l'Energie Atomique et aux énergies alternatives - CEA (FRANCE)
French research institutions > Centre National des Etudes Spatiales - CNES (FRANCE)
Université de Toulouse > Institut Supérieur de l'Aéronautique et de l'Espace - ISAE-SUPAERO (FRANCE)
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Deposited By: Jean-Marc Belloir
Deposited On:09 Feb 2017 09:13

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