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Charge Transfer Inefficiency in Pinned Photodiode CMOS image sensors: Simple Montecarlo modeling and experimental measurement based on a pulsed storage-gate method

Pelamatti, Alice and Goiffon, Vincent and Chabane, Aziouz and Magnan, Pierre and Virmontois, Cédric and Saint-Pé, Olivier and Breart de Boisanger, Michel Charge Transfer Inefficiency in Pinned Photodiode CMOS image sensors: Simple Montecarlo modeling and experimental measurement based on a pulsed storage-gate method. (2016) Solid-State Electronics, vol. 125. pp. 227-233. ISSN 0038-1101

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Official URL: http://dx.doi.org/10.1016/j.sse.2016.05.009

Abstract

The charge transfer time represents the bottleneck in terms of temporal resolution in Pinned Photodiode (PPD) CMOS image sensors. This work focuses on the modeling and estimation of this key parameter. A simple numerical model of charge transfer in PPDs is presented. The model is based on a Montecarlo simulation and takes into account both charge diffusion in the PPD and the effect of potential obstacles along the charge transfer path. This work also presents a new experimental approach for the estimation of the charge transfer time, called pulsed Storage Gate (SG) method. This method, which allows reproduction of a “worst-case” transfer condition, is based on dedicated SG pixel structures and is particularly suitable to compare transfer efficiency performances for different pixel geometries.

Item Type:Article
HAL Id:hal-01419994
Audience (journal):International peer-reviewed journal
Uncontrolled Keywords:
Institution:Other partners > Airbus (FRANCE)
French research institutions > Centre National des Etudes Spatiales - CNES (FRANCE)
Université de Toulouse > Institut Supérieur de l'Aéronautique et de l'Espace - ISAE-SUPAERO (FRANCE)
Laboratory name:
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Deposited By: Alice Pelamatti
Deposited On:20 Dec 2016 10:34

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