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Role of substrate outgassing on the formation dynamics of either hydrophilic or hydrophobic wood surfaces in atmospheric-pressure, organosilicon plasmas

Levasseur, O. and Stafford, Luc and Gherardi, Nicolas and Naudé, Nicolas and Beche, Eric and Esvan, Jérôme and Blanchet, Pierre and Riedl, Bernard and Sarkissian, Andranik Role of substrate outgassing on the formation dynamics of either hydrophilic or hydrophobic wood surfaces in atmospheric-pressure, organosilicon plasmas. (2013) Surface and Coatings Technology, 234. 42-47. ISSN 0257-8972

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Official URL: http://dx.doi.org/10.1016/j.surfcoat.2013.05.045

Abstract

This work examines the influence of substrate outgassing on the deposition dynamics of either hydrophilic or hydrophobic coatings on wood surfaces in organosilicon, dielectric barrier discharges. Sugar maple and black spruce wood samples were placed on the bottom electrode and the discharge was sustained in N2–HMDSO (hexamethyldisiloxane) gas mixtures by applying a 24 kV peak-to-peak voltage at 2 kHz. Current–voltage characteristics revealed a transition from a filamentary to a homogeneous discharge with increasing plasma treatment time, t. Based on opticalemission spectroscopy, the filamentary behaviorwas ascribed to the release of air and humidity from the wood substrate following discharge exposure which produced significant quenching of N2 metastables. This effect vanished at longer treatment times due to the nearly complete “pumping” of products from the wood substrate and the progressive deposition of a “barrier” layer. Analysis of the surface wettability through static, water contact angles (WCAs) and of the surface composition through Fourier-Transform-Infra-Red-Spectroscopy and X-ray-Photoelectron-Spectroscopy indicated that for t b 10 min, the wood surface was more hydrophilic due to the formation of a SiOx layer, a typical behavior for HMDSO deposition in presence of oxygen. On the other hand, for t > 10 min, the static WCA increased up to ~140° due to the deposition of hydrophobic Si(CH3)3-O-Si(CH3)2, Si(CH3)3, and Si(CH3)2 functional groups.

Item Type:Article
Additional Information:Thanks to Elsevier editor. The definitive version is available at http://www.sciencedirect.com
HAL Id:hal-01477163
Audience (journal):International peer-reviewed journal
Uncontrolled Keywords:
Institution:French research institutions > Centre National de la Recherche Scientifique - CNRS (FRANCE)
Université de Toulouse > Institut National Polytechnique de Toulouse - INPT (FRANCE)
Other partners > Université de Montréal - UdeM (CANADA)
Université de Toulouse > Université Toulouse III - Paul Sabatier - UPS (FRANCE)
Other partners > FPInnovations (CANADA)
Other partners > Plasmionique (CANADA)
Other partners > Université de Perpignan Via Domitia - UPVD (FRANCE)
Other partners > Université Laval (CANADA)
Laboratory name:
Funders:
National Science and Engineering Research Council (NSERC) - Fonds de Recherche du Québec – Nature et Technologies (FRQNT) - ANR (Association Nationale de la Recherche) - Commission Permanente de Coopération FrancoQuébécoise (CPCFQ
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Deposited By: cirimat webmestre
Deposited On:27 Feb 2017 08:57

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