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Multi-MGy Radiation Hardened CMOS Image Sensor: Design, Characterization and X/Gamma Rays Total Ionizing Dose Tests

Goiffon, Vincent and Corbière, Franck and Rolando, Sébastien and Estribeau, Magali and Avon, Barbara and Magnan, Pierre and Baer, Jérémy and Molina, Romain and Chabane, Aziouz and Cervantes, Paola and Gaillardin, Marc and Paillet, Philippe and Marcandella, Claude and Girard, Sylvain Multi-MGy Radiation Hardened CMOS Image Sensor: Design, Characterization and X/Gamma Rays Total Ionizing Dose Tests. (2015) In: Proceedings of Nuclear and Space Radiation Effects Conference (NSREC), 13 July 2015 - 17 July 2015 (Boston, United States).

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Official URL: http://dx.doi.org/10.1109/TNS.2015.2490479

Abstract

The radiation hardness of a radiation-hardened-by-design CMOS Image Sensor is validated up to several MGy(SiO2) (>100 Mrad) of TID. The perspectives in terms of further improvements and applications are discussed.

Item Type:Conference or Workshop Item (Speech)
Audience (journal):International peer-reviewed journal
Audience (conference):International conference proceedings
Uncontrolled Keywords:
Institution:French research institutions > Commissariat à l'Energie Atomique et aux énergies alternatives - CEA (FRANCE)
Université de Toulouse > Institut Supérieur de l'Aéronautique et de l'Espace - ISAE-SUPAERO (FRANCE)
Other partners > Université Jean Monnet - St Etienne (FRANCE)
Laboratory name:
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Deposited By: Vincent Goiffon
Deposited On:29 Jan 2016 13:07

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