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Speed Analysis in Pinned Photodiode CMOS Image Sensors based on a Pulsed Storage-Gate Method

Pelamatti, Alice and Goiffon, Vincent and Chabane, Aziouz and Magnan, Pierre and Virmontois, Cédric and Saint-Pé, Olivier and Bréart-de-Boisanger, Michel Speed Analysis in Pinned Photodiode CMOS Image Sensors based on a Pulsed Storage-Gate Method. (2015) In: Proceedings of European Solid-State Device conference (ESSDERC), 15 September 2015 - 17 September 2015 (Gratz, Austria).

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Abstract

The charge transfer time represents the bottleneck in terms of temporal resolution in Pinned Photodiode (PPD) CMOS image sensors. This work focuses on the modeling and estimation of this key parameter. A simple numerical model of charge transfer in PPDs is presented. The model is based on a Montecarlo simulation and takes into account both charge diffusion in the PPD and the effect of potential obstacles along the charge transfer path. This work also presents a new experimental approach for the estimation of the charge transfer time, called pulsed Storage Gate (SG) method. This method, which allows reproduction of a “worst-case” transfer condition, is based on dedicated SG pixel

Item Type:Conference or Workshop Item (Speech)
Audience (conference):International conference proceedings
Uncontrolled Keywords:
Institution:Other partners > Airbus (FRANCE)
French research institutions > Centre National d'Études Spatiales - CNES (FRANCE)
Université de Toulouse > Institut Supérieur de l'Aéronautique et de l'Espace - ISAE-SUPAERO (FRANCE)
Laboratory name:
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Deposited By: Alice Pelamatti
Deposited On:18 Jan 2016 14:52

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