OATAO - Open Archive Toulouse Archive Ouverte Open Access Week

TID Effects in CMOS and SOI - HBD vs HBT – application to MGy Hardening of a CMOS Imager

Gaillardin, Marc and Goiffon, Vincent TID Effects in CMOS and SOI - HBD vs HBT – application to MGy Hardening of a CMOS Imager. (2015) In: Advancements in Nuclear Instrumentation Measurement Methods and their Applications (ANIMMA2015), 20 April 2015 - 24 April 2015 (Lisbon, Portugal). (Unpublished)

[img] (Document in English)

PDF (Author's version) - Depositor and staff only - Requires a PDF viewer such as GSview, Xpdf or Adobe Acrobat Reader
2MB

Abstract

This presentation provides an overview of Total Ionizing Dose effects in CMOS bulk and SOI technologies. The particular case of hardening-by-design of a CMOS imager for the MGy range is used as a practical example to illustrates the presented degradation mechanisms.

Item Type:Conference or Workshop Item (Speech)
Audience (conference):International conference without published proceedings
Uncontrolled Keywords:
TID - MGy - SOI - CMOS - CIS - APS
Institution:French research institutions > Commissariat à l'Energie Atomique et aux énergies alternatives - CEA (FRANCE)
Université de Toulouse > Institut Supérieur de l'Aéronautique et de l'Espace - ISAE-SUPAERO (FRANCE)
Laboratory name:
Statistics:download
Deposited By: Vincent Goiffon
Deposited On:30 Aug 2016 09:10

Repository Staff Only: item control page