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Exploring the Kinetics of Formation and Annealing of Single Particle Displacement Damage in Microvolumes of Silicon

Raine, Mélanie and Goiffon, Vincent and Paillet, Philippe and Duhamel, Olivier and Girard, Sylvain and Gaillardin, Marc and Virmontois, Cédric and Belloir, Jean-Marc and Richard, Nicolas and Magnan, Pierre Exploring the Kinetics of Formation and Annealing of Single Particle Displacement Damage in Microvolumes of Silicon. (2014) In: IEEE Nuclear and Space Radiation Effects Conference (NSREC), 14 July 2014 - 18 July 2014 (Paris, France).

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Official URL: http://dx.doi.org/10.1109/TNS.2014.2364397

Abstract

An experimental method using a CMOS image sensor as test device is used to study the kinetics of formation and annealing of Single Particle Displacement Damage (SPDD) events in arrays of silicon microvolumes. The dark current level is monitored in real time under neutron irradiation, allowing to detect SPDD events and follow their subsequent annealing behavior. Both short term and long term annealing results are presented, with recordings from 75 ms to 4.5 days after SPDD events, performed with different integration times. A majority of pixels exhibits a continuous logarithmic relaxation; a selection of particular cases is finally presented, corresponding to pixels exhibiting Random Telegraph Signals.

Item Type:Conference or Workshop Item (Speech)
Audience (journal):International peer-reviewed journal
Audience (conference):International conference without published proceedings
Uncontrolled Keywords:
Institution:French research institutions > Commissariat à l'Energie Atomique et aux énergies alternatives - CEA (FRANCE)
French research institutions > Centre National d'Études Spatiales - CNES (FRANCE)
Université de Toulouse > Institut Supérieur de l'Aéronautique et de l'Espace - ISAE-SUPAERO (FRANCE)
Other partners > Université Jean Monnet - St Etienne (FRANCE)
Laboratory name:
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Deposited By: Vincent Goiffon
Deposited On:06 Jan 2016 15:10

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