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Exploring the Kinetics of Formation and Annealing of Single Particle Displacement Damage in Microvolumes of Silicon

Raine, Mélanie and Goiffon, Vincent and Paillet, Philippe and Duhamel, Olivier and Girard, Sylvain and Gaillardin, Marc and Virmontois, Cédric and Belloir, Jean-Marc and Richard, Nicolas and Magnan, Pierre Exploring the Kinetics of Formation and Annealing of Single Particle Displacement Damage in Microvolumes of Silicon. (2014) IEEE Transactions on Nuclear Science, vol.61 (n°6). pp. 2826-2833. ISSN 0018-9499

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Official URL: http://dx.doi.org/10.1109/TNS.2014.2364397

Abstract

An experimental method using a CMOS image sensor as test device is used to study the kinetics of formation and annealing of Single Particle Displacement Damage (SPDD) events in arrays of silicon microvolumes. The dark current level is monitored in real time under neutron irradiation, allowing to detect SPDD events and follow their subsequent annealing behavior. Both short term and long term annealing results are presented, with recordings from 75 ms to 4.5 days after SPDD events, performed with different integration times. A majority of pixels exhibits a continuous logarithmic relaxation; a selection of particular cases is finally presented, corresponding to pixels exhibiting Random Telegraph Signals.

Item Type:Article
Additional Information:Thanks to IEEE Xplore editor. The definitive version is available at http://ieeexplore.ieee.org/Xplore/home.jsp The original PDF of the article can be found at IEEE Transactions on Nuclear Science website : http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6953317
Audience (journal):International peer-reviewed journal
Uncontrolled Keywords:
Institution:French research institutions > Centre National des Etudes Spatiales - CNES (FRANCE)
Université de Toulouse > Institut Supérieur de l'Aéronautique et de l'Espace - ISAE-SUPAERO (FRANCE)
Other partners > Université Jean Monnet - St Etienne (FRANCE)
Laboratory name:
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Deposited By: Vincent Goiffon
Deposited On:16 Dec 2015 10:25

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