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Dark Current Spectroscopy on Alpha Irradiated Pinned Photodiode CMOS Image Sensors

Belloir, Jean-Marc and Goiffon, Vincent and Magnan, Pierre and Virmontois, Cédric and Gilard, Olivier and Raine, Mélanie and Paillet, Philippe Dark Current Spectroscopy on Alpha Irradiated Pinned Photodiode CMOS Image Sensors. (2015) In: 15th European Conference RADECS 2015, 14 September 2015 - 18 September 2015 (Moscou, Russian Federation).

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Abstract

Dark Current Spectroscopy (DCS) is tested for the first time on irradiated Pinned PhohoDiode (PPD) CMOS Image sensors (CIS) to detect and identify radiation-induced silicon bulk defects in the depleted volume of the pixels. Two different CIS are tested: a 5MP Commercial-Off-The-Shelf (COTS) CIS from OmniVision (OV5647) and a 256x256 pixels custom CIS. These CISs are irradiated with alpha particles at various fluences and two different particle energies are tested on the custom CIS (4 MeV and < 500 keV). Several types of defects are detected in both CIS (up to five defects in the custom CIS). The dark current is measured at various temperatures to extract the activation energy and deduce the energy levels of the defects. The defect formation rate per unit fluence is calculated. In the custom CIS, the annealing behavior of the defects is also studied by performing an isochronal annealing. Two different defects are identified: the divacancy and the vacancy-phosphorus. This work proves that the DCS technique can be used on irradiated CIS to detect and identify radiation-induced defects in silicon.

Item Type:Conference or Workshop Item (Speech)
Audience (conference):International conference proceedings
Uncontrolled Keywords:
Institution:French research institutions > Centre National des Etudes Spatiales - CNES (FRANCE)
Université de Toulouse > Institut Supérieur de l'Aéronautique et de l'Espace - ISAE-SUPAERO (FRANCE)
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Deposited By: Jean-Marc Belloir
Deposited On:10 Dec 2015 15:21

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