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Chemical vapor deposition of Pd/Cu alloy films from a new single source precursor

Krisyuk, Vladislav V. and Shubin, Yuriy V. and Senocq, François and Turgambaeva, Asiya E. and Duguet, Thomas and Igumenov, Igor K. and Vahlas, Constantin Chemical vapor deposition of Pd/Cu alloy films from a new single source precursor. (2015) Journal of Crystal Growth, 414. 130-134. ISSN 0022-0248

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Official URL: http://dx.doi.org/10.1016/j.jcrysgro.2014.09.032

Abstract

Cu/Pd alloys were deposited onto Si(100) and SiO2 (fused silica) substrates by MOCVD from PdL2×CuL2, (L=2-methoxy-2,6,6-trimethylheptane-3,5-dionate), a new single source bimetallic precursor. Deposition was performed at 10 Torr in a temperature range between 200 °C and 350 °C and was assisted by vacuum ultraviolet (VUV) irradiation of the precursor vapor from an excimer Xe-lamp. It was shown that the elemental and phase composition of the films can be controlled by varying the deposition temperature and by stimulating by VUV the precursor decomposition. The bulk compositional properties of the obtained films confirmed the feasibility of proposed approach and precursor to prepare Pd alloy membrane materials by the CVD method.

Item Type:Article
Additional Information:Thanks to Elsevier editor. The definitive version is available at http://www.sciencedirect.com/science/article/pii/S0022024814006502
HAL Id:hal-01126662
Audience (journal):International peer-reviewed journal
Uncontrolled Keywords:
Institution:French research institutions > Centre National de la Recherche Scientifique - CNRS (FRANCE)
Université de Toulouse > Institut National Polytechnique de Toulouse - INPT (FRANCE)
Other partners > Novosibirsk State University (RUSSIA)
Other partners > Siberian Branch of the Russian Academy of Sciences - SB RAS (RUSSIA)
Université de Toulouse > Université Toulouse III - Paul Sabatier - UPS (FRANCE)
Laboratory name:
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Deposited By: Thomas DUGUET
Deposited On:06 Mar 2015 14:29

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