Jaouen, Lionel and Roqueta, Fabrice and Scheid, Emmanuel and Vergnes, Hugues and Caussat, Brigitte Multiscale modelling of low-pressure CVD of Silicon based materials in deep submicronic trenches: a continuum feature scale model. (2005) In: Fifteenth European Conference on Chemical Vapor Deposition, EUROCVD-15, 4-9 september 2005, Bochum, Germany.
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Official URL: http://www.electrochem.org/dl/pv/published/2005/2005.htm
The ability to predict feature profile evolution across wafers during filling from equipment scale operating conditions is one important goal of process engineers for power component fabrication. We develop an integrated approach for simulating the multiple length scales needed to address this problem for Low Pressure CVD processes of silicon based materials in deep submicronic trenches (aspect ratio can exceed 50). In this approach, continuum models at the reactor (100m) and feature (10-7m) scales are tightly coupled in order to predict micro- and macro- loading effects in a transient environment. First, the main principles and assumptions of the reactor and trench scale models are presented. Then, some characteristic examples of numerical results at the trench scale are analysed and compared with the predictions of the deterministic Ballistic Transport-Reaction Model (BTRM) EVOLVE. This comparison shows that our continuum approach gives results as accurate as those of the BTRM one even for highly non conformable layers, for computations times up to 3 times lower.
|Item Type:||Conference or Workshop Item (Paper)|
|Additional Information:||Thanks to The Electrochemical Society editor.|
|Audience (conference):||International conference proceedings|
|Institution:||Other partners > STMicroelectronics (FRANCE)|
Université de Toulouse > Institut National Polytechnique de Toulouse - INPT
Université de Toulouse > Université Paul Sabatier-Toulouse III - UPS
French research institutions > Centre National de la Recherche Scientifique - CNRS
Laboratoire d'Analyse et d'Architecture des Systèmes - LAAS (Toulouse, France)
Laboratoire de Génie Chimique - LGC (Toulouse, France) - Génie des Interfaces & Milieux Divisés (GIMD) - CVD
|Deposited By:||Hélène Dubernard|
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