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Influence of the synthesis conditions of silicon nanodots in an industrial low pressure chemical vapor deposition reactor

Cocheteau, Vanessa and Scheid, Emmanuel and Mur, Pierre and Billon, Thierry and Caussat, Brigitte Influence of the synthesis conditions of silicon nanodots in an industrial low pressure chemical vapor deposition reactor. (2008) Applied Surface Science, vol. 2 (n° 10). 2927 -2933. ISSN 0169-4332

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Official URL: http://dx.doi.org/10.1016/j.apsusc.2007.10.050

Abstract

Experiments conducted in an industrial tubular low pressure chemical vapor deposition (LPCVD) reactor have demonstrated the reproducibility and spatial uniformity of silicon nanodots (NDs) area density and mean radius. The wafer to wafer uniformity was satisfactory (density and radius standard deviations <10%) for the whole conditions tested except for low silane flow rates, high silane partial pressures and short run durations(<20 s). Original synthesis conditions have then been searched to reach both excellent wafer to wafer uniformities along the industrial load of wafers and high NDs densities. From previous results, it was deduced that the key was to markedly increase run duration in decreasing temperature and in increasing silane pressure. At 773 K, run durations as long as 180 and 240 s have thus allowed to reach NDs densities respectively equal to 9 1011 and 6.5 1011 NDs/cm2 for the two highest silane pressures tested in the range 60–150 Pa.

Item Type:Article
Additional Information:Thanks to Elsevier editor. The definitive version is available at http://www.sciencedirect.com The original PDF of the article can be found at Applied Surface Science website : http://www.sciencedirect.com/science/journal/01694332/00406031
Audience (journal):International peer-reviewed journal
Uncontrolled Keywords:
Institution: Université de Toulouse > Institut National Polytechnique de Toulouse - INPT
French research institutions > Commissariat à l'Energie Atomique et aux énergies alternatives - CEA
Université de Toulouse > Université Paul Sabatier-Toulouse III - UPS
French research institutions > Centre National de la Recherche Scientifique - CNRS
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Deposited By: Hélène Dubernard

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