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Modelling of an industrial moving belt chemical vapour deposition reactor forming SiO2 films

Nieto, J.-P. and Jeannerot, Luc and Caussat, Brigitte Modelling of an industrial moving belt chemical vapour deposition reactor forming SiO2 films. (2005) Chemical Engineering Science, vol. 6 (n° 19). 5331 -5340. ISSN 0009-2509

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Official URL: http://dx.doi.org/10.1016/j.ces.2005.04.079

Abstract

In order to improve the efficiency of an industrial atmospheric pressure chemical vapour deposition (APCVD) moving belt reactor depositing silicon dioxide SiO2 films from tetraethoxysilane Si(OC2H5)4 (TEOS) andozone O3, a 2D simulation model based on the computational fluid dynamics (CFD) software ESTET has been developed. On the basis of the global chemical scheme of Zhou et al. [1997. Fifth International Conference on Advanced Thermal Processing of Semiconductors, RTP’97, New Orleans, LA, USA, pp. 257–268], a new kinetic model has been developed to conveniently represent our own set of experimental data. In particular, a chemical limitation for TEOS has been introduced, conferring increased chemical validity to the model. Simulations have shown that for the nominal conditions, TEOS conversion into SiO2 layers was too low andthat an increase in ozone concentration or in the nitrogen flow rates through the injector did not offer any advantage. Conversely, a decrease in the curtain nitrogen flow rate or an increase in that of the shieldcan enhance the process productivity and TEOS conversion.

Item Type:Article
Additional Information:Thanks to Elsevier editor. The definitive version is available at http://www.sciencedirect.com The original PDF of the article can be found at Chemical Engineering Science website : http://www.sciencedirect.com/science/journal/00092509
Audience (journal):International peer-reviewed journal
Uncontrolled Keywords:
Institution:Other partners > ASML (FRANCE)
Other partners > Atmel Rousset (FRANCE)
Université de Toulouse > Institut National Polytechnique de Toulouse - INPT
Université de Toulouse > Université Paul Sabatier-Toulouse III - UPS
French research institutions > Centre National de la Recherche Scientifique - CNRS
Laboratory name:
Laboratoire de Génie Chimique - LGC (Toulouse, France) - Génie des Interfaces & Milieux Divisés (GIMD) - CVD
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Deposited By: Hélène Dubernard
Deposited On:14 Oct 2008 12:08

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