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Graphene synthesis on copper from ethylene by Catalytic Chemical Vapor Deposition

Trinsoutrot, Pierre and Dardenne, Laetitia and Vergnes, Hugues and Caussat, Brigitte Graphene synthesis on copper from ethylene by Catalytic Chemical Vapor Deposition. (2014) In: Graphene 2014, 6 May 2014 - 9 May 2014 (Toulouse, France). (Unpublished)

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Abstract

Graphene is a promising material thanks to its physical properties and presents many potential applications for example as transparent electrodes in the field of OLED, solar cells or sensitive flat displays. However its production at low cost and large scale with controlled characteristics remains elusive. This is the reason why its synthesis has still to be improved in order to control its crystallinity and its number of layers over large areas. Catalytic CVD (Chemical Vapor Deposition) appears to be the most promising commercially viable process, since it allows forming cm2 scale areas of good quality graphene. However, most high quality CVD graphene is at present grown at temperatures close to 1,035°C on copper catalytic substrates from methane. This temperature is very close to the melting point of Cu (~1,085°C), and then creates intense Cu evaporation and then condensation fluxes upon cooling, which can affect the reproducibility of graphene synthesis and also decrease the samples quality and the reactor lifetime [1]. Some attempts have been made to decrease the synthesis temperature of graphene using alternative precursors like toluene, benzene, ethylene or acetylene [1-3]. Ethylene seems to be a good candidate to replace methane since it is cheap and easy to handle, and presents a higher reactivity than methane [1-2]. High quality graphene has already been obtained using ethylene on Cu foils at 850°C [1-2], but only at low total pressure (max. 100 Pa) and without a complete analysis of the key synthesis parameters influence. In the present study, the influence of the main deposition conditions on the graphene crystalline quality and number of layers has been analyzed using ethylene diluted into hydrogen and argon on copper foils (25 um thick, 99,999% Alfa Aesar) of 2x2 cm2. The operating temperature was varied between 700 and 850°C, the hydrogen on ethylene inlet molar ratio between 1.5 and 14 and the total pressure between 3 and 700 Torr, as detailed in Table 1. The ethylene partial pressure was maintained at 30 mTorr for all experiments conducted at the total pressure of 3 Torr and was equal to 7 Torr at 700 Torr of total pressure.

Item Type:Conference or Workshop Item (Poster)
Audience (conference):International conference without published proceedings
Uncontrolled Keywords:
Institution:French research institutions > Centre National de la Recherche Scientifique - CNRS (FRANCE)
Université de Toulouse > Institut National Polytechnique de Toulouse - INPT (FRANCE)
Université de Toulouse > Université Paul Sabatier-Toulouse III - UPS (FRANCE)
Laboratory name:
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Deposited By: Brigitte CAUSSAT-BONNANS
Deposited On:19 May 2014 15:58

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