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Single Event Effects in 4T Pinned Photodiode Image Sensors

Lalucaa, Valerian and Goiffon, Vincent and Magnan, Pierre and Virmontois, Cédric and Rolland, Guy and Petit, Sophie Single Event Effects in 4T Pinned Photodiode Image Sensors. (2013) IEEE Transactions on Nuclear Science, 60 (6). 4314 -4322. ISSN 0018-9499

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Official URL: http://dx.doi.org/10.1109/TNS.2013.2287751

Abstract

This paper describes how Single Event Effects (SEEs) produced by heavy ions disturb the operation of Pinned Photodiode (PPD) CMOS Image Sensors (CISs) in the frame of space and nuclear applications. Several CISs with 4T and 5T pinned photodiode pixels were exposed to ions with a broad Linear Energy Transfer range (3.3 to 67.7 MeV.cm²/mg). One sensor exhibited Single Event Latchups (SELs). Physical failure mechanism and latchup properties were investigated. SELs are caused by the level shifters of the addressing circuits, which create frame perturbations - following which, in some cases, parts of the addressing circuits need to be hardened. In the second part of the paper, the effects of anti-blooming capabilities on the Single Event Transient effects (SETs) are analyzed. SETs in pixels can be partially mitigated by anti-blooming through the transfer gate and/or a dedicated transistor. This work also shows that the number of pixels disturbed by SETs can be reduced by using appropriate anti-blooming techniques.

Item Type:Article
Additional Information:Thanks to IEEE editor. (c) 2011 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works. The definitive version is available at http://ieeexplore.ieee.org
Audience (journal):International peer-reviewed journal
Uncontrolled Keywords:
Institution:French research institutions > Centre National d'Études Spatiales - CNES (FRANCE)
Université de Toulouse > Institut Supérieur de l'Aéronautique et de l'Espace - ISAE-SUPAERO (FRANCE)
Laboratory name:
Département d'Electronique, Optronique et Signal - DEOS (Toulouse, France) - Conception d’Imageurs Matriciels Intégrés - CIMI
Funders:
ISAE - CNES - Région Midi-Pyrénées
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Deposited By: Valerian Lalucaa
Deposited On:15 Apr 2014 08:40

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