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Generic radiation hardened photodiode layouts for deep submicron CMOS image sensor processes

Goiffon, Vincent and Cervantes, Paola and Virmontois, Cédric and Corbière, Franck and Magnan, Pierre and Estribeau, Magali Generic radiation hardened photodiode layouts for deep submicron CMOS image sensor processes. (2011) In: IEEE Nuclear and Space Radiation Effects Conference (NSREC), 25 July 2011 - 29 July 2011 (Las Vegas, United States). (Unpublished)

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Abstract

Selected radiation hardened photodiode layouts, manufactured in a deep submicron CMOS Image Sensor technology, are irradiated by 60Co gamma-rays up to 2.2 Mrad(SiO2) and studied in order to identify the most efficient structures and the guidelines (recess distance, bias voltage) to follow to make them work efficiently in such technology. To do so, both photodiode arrays and active pixel sensors are used. After 2.2 Mrad(SiO2), the studied sensors are fully functional and most of the radiation hardened photodiodes exhibit radiation induced dark current values more than one order of magnitude lower than the standard photodiode.

Item Type:Conference or Workshop Item (Other)
Audience (journal):International peer-reviewed journal
Audience (conference):International conference without published proceedings
Uncontrolled Keywords:
Institution:Université de Toulouse > Institut Supérieur de l'Aéronautique et de l'Espace - ISAE-SUPAERO (FRANCE)
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Deposited By: Vincent Goiffon
Deposited On:18 Sep 2014 14:43

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