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Radiation Damages in CMOS Active Pixel Sensors

Goiffon, Vincent and Magnan, Pierre and Virmontois, Cédric and Cervantes, Paola and Corbière, Franck and Estribeau, Magali Radiation Damages in CMOS Active Pixel Sensors. (2011) In: OSA Imaging Systems and Applications, 10 July 2011 - 14 July 2011 (Toronto, Canada).

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Official URL: http://dx.doi.org/10.1364/ISA.2011.IMA3

Abstract

This paper presents a summary of the main results we observed on irradiated custom imagers manufactured using 0.18 um CMOS processes dedicated to imaging. Several types of energetic particles have been used (gamma rays, X-rays, protons and neutrons) to irradiate the studied devices. Both total ionizing dose (TID) and displacement damage effects are reported. The most sensitive parameter is still the dark current.

Item Type:Conference or Workshop Item (Paper)
Additional Information:Imaging and Applied Optics, OSA Technical Digest (CD) (Optical Society of America, 2011, ISBN : 978-1-55752-914-5
Audience (conference):International conference proceedings
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Institution:Université de Toulouse > Institut Supérieur de l'Aéronautique et de l'Espace - ISAE-SUPAERO (FRANCE)
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Deposited By: Vincent Goiffon
Deposited On:23 Sep 2014 10:43

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