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Influence of Displacement Damage Dose on Dark Current Distribution of Irradiated CMOS Image Sensors

Virmontois, Cédric and Goiffon, Vincent and Magnan, Pierre and Girard, Sylvain and Saint-Pé, Olivier and Petit, Sophie and Rolland, Guy Influence of Displacement Damage Dose on Dark Current Distribution of Irradiated CMOS Image Sensors. (2011) In: 12th European Conference on Radiation and Its Effects on Components and Systems (RADECS 2011), 19 September 2011 - 23 September 2011 (Sevilla, Spain).

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Official URL: http://dx.doi.org/10.1109/RADECS.2011.6131312

Abstract

Dark current increase distributions due to displacement damages are modeled using displacement damage dose concept. Several CMOS image sensors have been exposed to neutrons or protons and we have characterized their degradation in terms of dark current increase. We have been able to extract a set of two factors from the experimental dark current increase distributions. These factors are used to predict and build dark current increase distribution and leads to a better understanding of displacement damage effects on CMOS image sensors.

Item Type:Conference or Workshop Item (Paper)
Additional Information:12th European Conference on Radiation and Its Effects on Components and Systems (RADECS 2011), ISBN : 9781457705854, IEEE
Audience (conference):International conference proceedings
Uncontrolled Keywords:
Institution:French research institutions > Commissariat à l'Energie Atomique et aux énergies alternatives - CEA (FRANCE)
French research institutions > Centre National d'Études Spatiales - CNES (FRANCE)
Other partners > EADS - Astrium (FRANCE)
Université de Toulouse > Institut Supérieur de l'Aéronautique et de l'Espace - ISAE-SUPAERO (FRANCE)
Laboratory name:
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Deposited By: Vincent Goiffon
Deposited On:23 Sep 2014 15:51

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