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Multi level RTS in proton irradiated CMOS image sensors manufactured in deep submicron technology

Goiffon, Vincent and Hopkinson, Gordon R. and Magnan, Pierre and Bernard, Frédéric and Rolland, Guy and Saint-Pé, Olivier Multi level RTS in proton irradiated CMOS image sensors manufactured in deep submicron technology. (2008) In: Radiation Effects on Components and Systems - RADECS, 10 September 2008 - 12 September 2008 (Jyväskylä, Finland). (Unpublished)

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Abstract

A new automated method able to detect multilevel random telegraph signals (RTS) in pixel arrays and to extract their main characteristics is presented. The proposed method is applied to several proton irradiated pixel arrays manufactured using a 0.18um CMOS process dedicated to imaging. Despite the large proton energy range and the large fluence range used, similar exponential RTS amplitude distributions are observed. A mean maximum amplitude independent of displacement damage dose is extracted from these distributions and the number of RTS defects appears to scale well with total nonionizing energy loss. These conclusions allow the prediction of RTS amplitude distributions. The effect of electric field on RTS amplitude is also studied and no significant relation between applied bias and RTS amplitude is observed.

Item Type:Conference or Workshop Item (Other)
Audience (conference):International conference without published proceedings
Uncontrolled Keywords:
Institution:French research institutions > Centre National d'Études Spatiales - CNES (FRANCE)
Other partners > EADS - Astrium (FRANCE)
Université de Toulouse > Institut Supérieur de l'Aéronautique et de l'Espace - ISAE-SUPAERO (FRANCE)
Other partners > Surrey Satellite Technology (UNITED KINGDOM)
Laboratory name:
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Deposited By: Vincent Goiffon
Deposited On:19 Sep 2014 14:07

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