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Comparison between TCAD simulated and measured carrier lifetimes in CMOS photodiodes using the Open Circuit Voltage Decay method

Marcelot, Olivier and Magnan, Pierre Comparison between TCAD simulated and measured carrier lifetimes in CMOS photodiodes using the Open Circuit Voltage Decay method. (2013) Solid-State Electronics, 81. 135-139. ISSN 0038-1101

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Official URL: http://dx.doi.org/10.1016/j.sse.2012.11.005

Abstract

The control and prediction of minority carrier lifetime are crucial for the design of photodiodes, especially for CMOS image sensors, because signal electrons must be captured before recombination. Analytic models have been developed but do not allow accurate and reliable lifetime estimations according to complex photodiode architecture. In this work, we show for the first time that mixed-mode TCAD simulations produce accurate and reliable results for realistic photodiode designs. To arrive at this conclusion, we have performed measurements and simulations on two different photodiodes using the Open Circuit Voltage Decay method.

Item Type:Article
Additional Information:Thanks to Springer editor. The definitive version is available at http://www.springerlink.com The original PDF of the article can be found at Advances in Solid-State Electronics website: http://www.sciencedirect.com/science/journal/00381101/81/supp/C
HAL Id:hal-00935974
Audience (journal):International peer-reviewed journal
Uncontrolled Keywords:
Institution:Université de Toulouse > Institut Supérieur de l'Aéronautique et de l'Espace - ISAE-SUPAERO (FRANCE)
Laboratory name:
Département d'Electronique, Optronique et Signal - DEOS (Toulouse, France) - Conception d’Imageurs Matriciels Intégrés - CIMI
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Deposited By: olivier marcelot
Deposited On:24 Jan 2014 11:05

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